Aerosol Jet Printed, Sub-2 V Complementary Circuits Constructed from P- and N-Type Electrolyte Gated Transistors

Title
Aerosol Jet Printed, Sub-2 V Complementary Circuits Constructed from P- and N-Type Electrolyte Gated Transistors
Author(s)
홍기현[홍기현]김용현[김용현]김세현Wei Xie[Wei Xie]Wenchao David Xu[Wenchao David Xu]Chris H. Kim[Chris H. Kim]C. Daniel Frisbie[C. Daniel Frisbie]
Keywords
THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; HIGH-MOBILITY; LOW-VOLTAGE; PERFORMANCE; ZNO; POLY(3-HEXYLTHIOPHENE); DIELECTRICS; RESISTANCE
Issue Date
201411
Publisher
WILEY-V C H VERLAG GMBH
Citation
ADVANCED MATERIALS, v.26, no.41, pp.7032 - +
Abstract
Printed low-voltage complementary inverters based on electrolyte gated transistors are demonstrated. The printed complementary inverters showed gain of 18 and power dissipation below 10 nW. 5-stage ring oscillators operate at 2 V with an oscillation frequency of 2.2 kHz, corresponding to stage delays of less than 50 mu s. The printed circuits exhibit good stability under continuous dynamic operation.
URI
http://hdl.handle.net/YU.REPOSITORY/30493http://dx.doi.org/10.1002/adma.201401330
ISSN
0935-9648
Appears in Collections:
공과대학 > 화학공학부 > Articles
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