Flexible InGaN LEDs on a Polyimide Substrate Fabricated Using a Simple Direct-Transfer Method

Title
Flexible InGaN LEDs on a Polyimide Substrate Fabricated Using a Simple Direct-Transfer Method
Author(s)
박시현최원식박형조[박형조]정탁[정탁]
Keywords
LIGHT-EMITTING-DIODES; LASER LIFT-OFF; SAPPHIRE
Issue Date
201411
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE PHOTONICS TECHNOLOGY LETTERS, v.26, no.21, pp.2115 - 2117
Abstract
An array of InGaN-based flexible light-emitting diodes (FLEDs) was fabricated on a full-scale 2-in polyimide substrate. An InGaN epitaxial layer on a sapphire substrate was directly bonded with a polyimide substrate, and the sapphire substrate was then removed via a laser lift-off process. A subsequent n-GaN etching process for a chip isolation finished LED chips over the entire 2-in polyimide substrate. Using this simple direct-transfer process, we obtained a production yield of over 97%. The FLED device operated linearly up to an input current level of 500 mA. Output power, operating voltage, and wavelength shift of the FLED up to 400-mA driving current were nearly the same as for a vertical LED on metal substrate.
URI
http://hdl.handle.net/YU.REPOSITORY/30458http://dx.doi.org/10.1109/LPT.2014.2348591
ISSN
1041-1135
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공과대학 > 전자공학과 > Articles
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