Aerosol Jet Printed p- and n-type Electrolyte-Gated Transistors with a Variety of Electrode Materials: Exploring Practical Routes to Printed Electronics

Title
Aerosol Jet Printed p- and n-type Electrolyte-Gated Transistors with a Variety of Electrode Materials: Exploring Practical Routes to Printed Electronics
Author(s)
홍기현[홍기현]김세현Ankit Mahajan[Ankit Mahajan]C. D. Frisbie[C. D. Frisbie]
Keywords
FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; POLYMER SOLAR-CELLS; TRANSPARENT ELECTRODE; LOW-TEMPERATURE; IONIC LIQUIDS; LOW-VOLTAGE; OXIDE; PERFORMANCE; DIELECTRICS
Issue Date
201411
Publisher
AMER CHEMICAL SOC
Citation
ACS APPLIED MATERIALS & INTERFACES, v.6, no.21, pp.18704 - 18711
Abstract
Printing electrically functional liquid inks is a promising approach for achieving low-cost, large-area, additive manufacturing of flexible electronic circuits. To print thin-film transistors, a basic building block of thin-film electronics, it is important to have several options for printable electrode materials that exhibit high conductivity, high stability, and low-cost. Here we report completely aerosol jet printed (AJP) p- and n-type electrolyte-gated transistors (EGTs) using a variety of different electrode materials including highly conductive metal nanopartides (Ag), conducting polymers (polystyrene-sulfonate doped poly(3,4-ethylendedioxythiophene, PEDOT:PSS), transparent carbon-based materials (reduced graphene oxide). Using these source-drain electrode materials and a PEDOT:PSS/ion gel gate stack, we demonstrated all-printed p- and n-type EGTs in combination with poly(3-hexythiophene) and ZnO semiconductors. All transistor components (including electrodes, semiconductors, and gate insulators) were printed by AJP. Both kinds of devices showed typical p- and n-type transistor characteristics, and exhibited both low-threshold voltages (<2 V) and high hole and electron mobilities. Our assessment suggests Ag electrodes may be the best option in terms of overall performance for both types of EGTs.
URI
http://hdl.handle.net/YU.REPOSITORY/30453http://dx.doi.org/10.1021/am504171u
ISSN
1944-8244
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공과대학 > 화학공학부 > Articles
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