High efficiency n-ZnO/p-Si core-shell nanowire photodiode based on well-ordered Si nanowire array with smooth surface

Title
High efficiency n-ZnO/p-Si core-shell nanowire photodiode based on well-ordered Si nanowire array with smooth surface
Author(s)
김수현고경용[고경용]강혜민[강혜민]김정길[김정길]이우[이우]이희성[이희성]임성일[임성일]강지연[강지연]명재민[명재민]김한길김형준[김형준]
Keywords
LUMINESCENCE; SILICON
Issue Date
201411
Publisher
ELSEVIER SCI LTD
Citation
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.27, pp.297 - 302
Abstract
A highly efficient n-ZnO/p-Si core-shell nanowire (NW) photodiode was fabricated using ZnO grown by atomic layer deposition (ALD) on a well-ordered Si NW array. Si NW arrays were prepared by metal-assisted chemical etching, for which a metal mesh with a well-organized nanohole array was made using anodic aluminum oxide. This resulted in a good arrangement, smooth surface, and small diameter distribution of the Si NW array. Consequently. ZnO layers with various thicknesses from 15 to 30 nm were deposited by the ALD method. Because of the smooth surface of the well-ordered Si NWs yielding low surface roughness scattering, the resulting photodiode showed significantly improved device characteristics. (C) 2014 Elsevier Ltd. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/30440http://dx.doi.org/10.1016/j.mssp.2014.07.012
ISSN
1369-8001
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공과대학 > 신소재공학부 > Articles
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