Observation and tunability of room temperature photoluminescence of GaAs/GaInAs core-multiple-quantum-well shell nanowire structure grown on Si (100) by molecular beam epitaxy

Title
Observation and tunability of room temperature photoluminescence of GaAs/GaInAs core-multiple-quantum-well shell nanowire structure grown on Si (100) by molecular beam epitaxy
Author(s)
장자순박광욱[박광욱]박장용[박장용]S. Ravindran[S. Ravindran]유용련[유용련]김봉중[김봉중]이용탁[이용탁]
Keywords
GAAS NANOWIRES; OPTICAL-PROPERTIES; SINGLE NANOWIRE; HETEROSTRUCTURES; SILICON; SYSTEM
Issue Date
201411
Publisher
SPRINGER
Citation
NANOSCALE RESEARCH LETTERS, v.9
Abstract
We report the observation of room temperature photoluminescence (PL) emission from GaAs/GaInAs core-multiple-quantum-well (MQW) shell nanowires (NWs) surrounded by AlGaAs grown by molecular beam epitaxy (MBE) using a self-catalyzed technique. PL spectra of the sample show two PL peaks, originating from the GaAs core NWs and the GaInAs MQW shells. The PL peak from the shell structure red-shifts with increasing well width, and the peak position can be tuned by adjusting the width of the MQW shell. The GaAs/GaInAs core-MQW shell NW surrounded by AlGaAs also shows an enhanced PL intensity due to the improved carrier confinement owing to the presence of an AlGaAs clad layer. The inclined growth of the GaAs NWs produces a core-MQW shell structure having a different PL peak position than that of planar QWs. The PL emission by MQW shell and the ability to tune the PL peak position by varying the shell width make such core-shell NWs highly attractive for realizing next generation ultrasmall light sources and other optoelectronics devices.
URI
http://hdl.handle.net/YU.REPOSITORY/30432http://dx.doi.org/10.1186/1556-276X-9-626
ISSN
1556-276X
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공과대학 > 전자공학과 > Articles
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