Growth and optical characteristics of Mg-doped GaAs epitaxial layers by molecular beam epitaxy

Title
Growth and optical characteristics of Mg-doped GaAs epitaxial layers by molecular beam epitaxy
Author(s)
김종수Hyun Young Choi[Hyun Young Choi]Min Young Cho[Min Young Cho]Kwang Gug Yim[Kwang Gug Yim]Min Su Kim[Min Su Kim]Dong-Yul Lee[Dong-Yul Lee]Jin Soo Kim[Jin Soo Kim]Jae-Young Leem[Jae-Young Leem]
Keywords
CHEMICAL-VAPOR-DEPOSITION; TEMPERATURE-DEPENDENCE; ELECTRICAL-PROPERTIES; PHASE EPITAXY; PHOTOLUMINESCENCE; SURFACE
Issue Date
201201
Publisher
ELSEVIER SCIENCE BV
Citation
MICROELECTRONIC ENGINEERING, v.89, pp.6 - 9
Abstract
Photoluminescence (11) measurement is used to study the optical properties of Mg-doped GaAs epitaxial layers grown by molecular beam epitaxy (MBE) with various growth temperatures. Four dominant PL peaks are observed, which may be associated with free-to-bound (e-A), exciton-bound to neutral acceptor (A degrees X), and two kinds of acceptor associated (g, g-g) transitions. The g and g-g peaks are especially prominent in a sample with a carrier concentration of 2.3 x 10(17) cm(-3). To investigate the behavior of each peak as a function of temperature. PL measurements were carried out over a temperature range of 18-152 K. The A degrees X peak position follows the Varshni model for GaAs with increasing temperature. For the g and A degrees X peaks, we observe an increase in PL intensity with increasing temperature from 18 to 28 K. This phenomenon is known as "negative thermal quenching (NTQ)", and it is observed in the g peak for the first time in this paper. (C) 2011 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/30066http://dx.doi.org/10.1016/j.mee.2011.04.011
ISSN
0167-9317
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이과대학 > 물리학과 > Articles
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