Schottky Characteristics of Pt Contacts on (11-22) Semipolar n-Type GaN Grown on m-Plane Sapphire Substrates

Title
Schottky Characteristics of Pt Contacts on (11-22) Semipolar n-Type GaN Grown on m-Plane Sapphire Substrates
Author(s)
정성민[정성민]이성남[이성남]안광순김현수[김현수]
Keywords
THERMIONIC-FIELD-EMISSION; MULTIPLE-QUANTUM WELLS; I-V-T; P-GAN; BARRIER; REDUCTION; DIODES
Issue Date
201202
Publisher
KOREAN INST METALS MATERIALS
Citation
ELECTRONIC MATERIALS LETTERS, v.8, no.1, pp.17 - 20
Abstract
The Schottky characteristics of Pt contacts fabricated on (11-22) semipolar n-type GaN were investigated. The saturation current density and the ideality factors obtained using the thermionic emission model were as large as 2.2 x 10(-3) A/cm(2) and 2.19, respectively, as a result of the strong leakage components in the current-voltage curves. The barrier inhomogeneity model applied to the temperature dependent electrical data exhibited a mean barrier height of 1.1 eV with a large standard deviation of 169 meV. The thermionic field emission model yielded reliable Schottky parameters including a tunneling parameter of 0.054 eV and a Schottky barrier height of 1.23 eV.
URI
http://hdl.handle.net/YU.REPOSITORY/29901http://dx.doi.org/10.1007/s13391-011-1097-4
ISSN
1738-8090
Appears in Collections:
공과대학 > 화학공학부 > Articles
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