The electrical and optical properties of indium zinc tin oxide thin films with different Sn/Zn ratio

Title
The electrical and optical properties of indium zinc tin oxide thin films with different Sn/Zn ratio
Author(s)
이희영다미시[다미시]마홍찬[마홍찬]김정주[김정주]
Keywords
TRANSPARENT CONDUCTING OXIDE; SUBSTRATE-TEMPERATURE; HETERO-TARGET; SYSTEM; ZNO
Issue Date
201203
Publisher
ELSEVIER SCIENCE SA
Citation
THIN SOLID FILMS, v.520, no.10, pp.3741 - 3745
Abstract
Indium zinc tin oxide (IZTO) thin films with two different chemical compositions, i.e. IZTO15 and IZTO25, where In content was fixed at 60 at.% and Sn content was 15 and 25 at.%, respectively, were deposited onto alkaline-free glass substrate at temperature from 37 degrees C to 600 degrees C. The deposition process was carried out in argon using an RF magnetron sputter. After deposition, the films were annealed in argon atmosphere at 450 degrees C for 30 min. The effect of substrate temperature and annealing treatment was investigated, and the minimum resistivity value of 3.44 x 10(-4)Omega.cm was obtained from the film deposited at 400 degrees C using IZTO25 target followed by rapid thermal annealing at 450 degrees C for 30 min. The average optical transmittance was kept fairly high over 80%. It was proven that both substrate temperature and thermal annealing were important parameters in lowering the electrical resistivity without deteriorating optical properties. (C) 2011 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/29622http://dx.doi.org/10.1016/j.tsf.2011.10.064
ISSN
0040-6090
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공과대학 > 신소재공학부 > Articles
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