Photocurrent Spectroscopy of InAs/GaAs Quantum Dots Grown by Using MBE

Title
Photocurrent Spectroscopy of InAs/GaAs Quantum Dots Grown by Using MBE
Author(s)
배인호조현준[조현준]
Keywords
ELECTRICAL CHARACTERISTICS; OPTICAL-PROPERTIES; TEMPERATURE; DIODES; LAYER
Issue Date
201203
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.60, no.5, pp.787 - 790
Abstract
The electrical properties of InAs/GaAs quantum dots grown by using molecular beam epitaxy (MBE) were studied by using photocurrent (PC) spectroscopy. From the photocurrent spectrum at 20 K, the signals around 1.24 and 1.49 eV were related to the quantum dots and the GaAs layer, respectively. The bias voltage dependence of the PC spectra showed that the Schottky barrier height of Au/GaAs was 0.8 V. In the temperature dependence of I-V curves, the photocurrent intensity changed differently for different incident photon energies (1.3 and 1.6 eV) because of a decrease in the excitons binding energy in the quantum dots.
URI
http://hdl.handle.net/YU.REPOSITORY/29558http://dx.doi.org/10.3938/jkps.60.787
ISSN
0374-4884
Appears in Collections:
이과대학 > 물리학과 > Articles
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