Carrier Transport Mechanism of Ni/Ag/Pt Contacts to p-Type GaN

Title
Carrier Transport Mechanism of Ni/Ag/Pt Contacts to p-Type GaN
Author(s)
박영준[박영준]안광순김현수[김현수]
Keywords
NONALLOYED OHMIC CONTACTS; MG-DOPED GAN; LOW-RESISTANCE; SURFACE-TREATMENT; HIGH-REFLECTANCE; RESISTIVITY; LAYERS
Issue Date
201203
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE TRANSACTIONS ON ELECTRON DEVICES, v.59, no.3, pp.680 - 684
Abstract
The carrier transport mechanisms of Ni/Ag/Pt contacts to moderately Mg-doped p-GaN (sample A) and highly Mg-doped p-GaN (sample B) were investigated. Depending on the Mg doping concentration, the dominant carrier transport mechanism could be categorized as thermionic field emission for sample A and carrier transport through the deep-level defect (DLD) band for sample B, resulting in different specific contact resistances of 7.1 x 10(-2) and 7.0 x 10(-4) Omega cm(2) for samples A and B, respectively. For sample A, the contact parameters, including a Schottky barrier height of 0.94 eV and a tunneling parameter of 0.045 eV, could be observed, yielding the substantial interfacial carriers of 4.5 x 10(19) cm(-3) and, hence, field emission through a thin barrier. For sample B, the effective barrier height associated with the DLD band was suggested to be an important parameter since the carrier transport predominantly occurred through the DLD band rather than the valence band. Accordingly, the effective barrier height was calculated to be 0.12 eV, which was low enough to explain the excellent ohmic contact.
URI
http://hdl.handle.net/YU.REPOSITORY/29495http://dx.doi.org/10.1109/TED.2011.2180725
ISSN
0018-9383
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공과대학 > 화학공학부 > Articles
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