Atomic layer deposition of Ti-doped ZnO films with enhanced electron mobility

Title
Atomic layer deposition of Ti-doped ZnO films with enhanced electron mobility
Author(s)
김수현이도중[이도중]권장연[권장연]김기범[김기범]Jimmy Xu[Jimmy Xu]김기주[김기주]
Keywords
OXIDE THIN-FILMS; TRANSPARENT CONDUCTING OXIDES; INDIUM OXIDE; ZINC-OXIDE; OPTICAL-PROPERTIES; SOLAR-CELLS; GROWTH; SEMICONDUCTORS; IN2O3; GENERATION
Issue Date
201308
Publisher
ROYAL SOC CHEMISTRY
Citation
JOURNAL OF MATERIALS CHEMISTRY C, v.1, no.31, pp.4761 - 4769
Abstract
Ti is introduced as a dopant during the atomic layer deposition (ALD) growth of ZnO for use as a transparent electrode. ALD-grown Ti-doped ZnO (TZO) films are deposited via alternate stacking of ZnO and TiOx atomic-doping layers. Their growth behavior, structural, electrical and optical properties are investigated. Macroscopic film growth and doping concentration characterization show that both diethylzinc and titanium tetrakis(isopropoxide) exhibit enhanced adsorption during the ALD of TZO films. Contrary to conventional homogeneous compounds, atomic-layer Ti doping by ALD results in a much higher electrical conductivity and doping efficiency compared to its Al counterpart. Specifically, the ALD-grown TZO films show an electrical conductivity of 951 S cm(-1), nearly twice that of AZO films (591 S cm(-1)), thanks to the high doping efficiency of Ti (41%) and its extraordinary high mobility (>20 cm(2) V-1 s(-1)). Such high electron mobility is likely due to a smaller concentration of inactivated dopants as scattering centers.
URI
http://hdl.handle.net/YU.REPOSITORY/29197http://dx.doi.org/10.1039/c3tc30469h
ISSN
2050-7526
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공과대학 > 신소재공학부 > Articles
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