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dc.contributor.author윤당혁ko
dc.contributor.author노비얀토알피안ko
dc.date.accessioned2015-12-17T03:07:34Z-
dc.date.available2015-12-17T03:07:34Z-
dc.date.created2015-11-13-
dc.date.issued201309-
dc.identifier.citationDIAMOND AND RELATED MATERIALS, v.38, pp.124 - 130-
dc.identifier.issn0925-9635-
dc.identifier.urihttp://hdl.handle.net/YU.REPOSITORY/29035-
dc.identifier.urihttp://dx.doi.org/10.1016/j.diamond.2013.07.003-
dc.description.abstractThe feasibility of a single component rare-earth oxide (Sc2O3, CeO2, Nd2O3, Sm2O3, Gd2O3, Dy2O3, Ho2O3, Er2O3, La2O3, Tm2O3, Yb2O3 and Lu2O3) as a sintering additive for beta-SiC was examined. The Gibbs formation free energies were first considered to identify the rare-earth oxides that would not decompose SiC at the typical hot pressing temperatures (1973-2123 K). The results from the thermodynamic calculations were then tested experimentally. All rare-earth oxides examined in this study increased the density of the samples without decomposing SiC, which is in contrast to that observed with most main-group oxides reported previously. Rare-earth oxide appeared to form a eutectic composition with SiO2 existed on the SiC surface at temperatures lower than 1700 degrees C and acted as a liquid-phase sintering additive. The decrease in particle size of the sintering additive resulted in an increase in SiC density, indicating the importance of a uniform additive distribution to achieve a dense SiC. (C) 2013 Elsevier B.V. All rights reserved.-
dc.language영어-
dc.publisherELSEVIER SCIENCE SA-
dc.subjectTHERMODYNAMIC CALCULATION-
dc.subjectOXIDATION RESISTANCE-
dc.subjectSICF/SIC COMPOSITES-
dc.subjectSIC-CERAMICS-
dc.subjectPHASE-
dc.subjectMICROSTRUCTURE-
dc.subjectDENSIFICATION-
dc.subjectINFILTRATION-
dc.subjectSTRENGTH-
dc.subjectBEHAVIOR-
dc.titleRare-earth oxide additives for the sintering of silicon carbide-
dc.typeArticle-
dc.identifier.wosid000324664700023-
dc.identifier.scopusid2-s2.0-84881299156-
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