Homogeneous multi-layered films of SiO (x) and SiO (x) N (y) deposited on PEN by using a facing target sputtering system for passivation of organic light emitting diodes

Title
Homogeneous multi-layered films of SiO (x) and SiO (x) N (y) deposited on PEN by using a facing target sputtering system for passivation of organic light emitting diodes
Author(s)
손선영Kim, Hwa-min[Kim, Hwa-min]Bae, Kang[Bae, Kang]
Keywords
BOMBARDMENT
Issue Date
201309
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.63, no.6, pp.1181 - 1185
Abstract
Homogeneous multi-layered barrier films of SiO (x) and SiO (x) N (y) were fabricated from the same Si target by means of a reactive process using a facing target sputtering (FTS) system. The multi-layer films gave 35% improved barrier performance and the fabrication process was 70% faster that the for with single SiOxNy layers of the same thickness. The water vapor transmission rate was reduced to the order of 10(-4) g m (-2) day (-1) for a three-pair system of SiO (x) N (y) /SiO (x) bilayers.
URI
http://hdl.handle.net/YU.REPOSITORY/29015http://dx.doi.org/10.3938/jkps.63.1181
ISSN
0374-4884
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기초교육대학 > 교양학부 > Articles
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