Surface fermi level pinning of semipolar n-type GaN surfaces grown on m-plane sapphire substrates

Title
Surface fermi level pinning of semipolar n-type GaN surfaces grown on m-plane sapphire substrates
Author(s)
정성민[정성민]이성남[이성남]안광순김현수[김현수]
Keywords
THERMIONIC-FIELD-EMISSION; MULTIPLE-QUANTUM WELLS; SCHOTTKY CONTACTS; REDUCTION; BARRIER
Issue Date
201309
Publisher
KOREAN INST METALS MATERIALS
Citation
ELECTRONIC MATERIALS LETTERS, v.9, no.5, pp.609 - 613
Abstract
The Schottky barrier height and the S-parameter of the semipolar n-type GaN grown on m-plane sapphire substrate were investigated by using Schottky diodes fabricated with the different work functions of metals including Cu, Pd, and Pt. The Barrier inhomogeneity model applied to temperature dependent current - voltage characteristics of Schottky diodes revealed the mean barrier heights of 0.86, 0.77, and 0.82 eV for the Cu, Pd, and Pt contact, respectively. The extracted S-parameter was nearly zero, indicating a pinning of the surface Fermi level at approximately 0.8 eV below the conduction band. This could be attributed to the substantial crystallographic defects of semipolar GaN as verified from the atomic force microscope and x-ray diffraction measurements.
URI
http://hdl.handle.net/YU.REPOSITORY/28969http://dx.doi.org/10.1007/s13391-013-2217-0
ISSN
1738-8090
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공과대학 > 화학공학부 > Articles
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