In/Ga-Free, Inkjet-Printed Charge Transfer Doping for Solution-Processed ZnO

Title
In/Ga-Free, Inkjet-Printed Charge Transfer Doping for Solution-Processed ZnO
Author(s)
김세현유성훈[유성훈]김범준[김범준]강문성[강문성]한종훈[한종훈]이준영[이준영]조정호[조정호]
Keywords
THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; HIGH-PERFORMANCE; LOW-TEMPERATURE; DOPED ZNO; SOL-GEL; ZINC-OXIDE; SEMICONDUCTORS; ELECTRONICS; POLYMER
Issue Date
201310
Publisher
AMER CHEMICAL SOC
Citation
ACS APPLIED MATERIALS & INTERFACES, v.5, no.19, pp.9765 - 9769
Abstract
An In/Ga-free doping method of zinc oxide (ZnO) is demonstrated utilizing a printable charge transfer doping layer (CTDL) based on (3-aminopropyl)-triethoxysilane (APS) molecules. The self-assembled APS molecules placed on top of ZnO thin films lead to n-type doping of ZnO and filling shallow electron traps, due to the strong electron-donating characteristics of the amine group in APS molecules. The CTDL doping can tune the threshold voltage and the mobility of the ZnO thin-film transistors (TFTs) as one varies the grafting density of the APS molecules and the thickness of the underneath ZnO thin films. From an optimized condition, high-performance ZnO TFTs can be achieved that exhibit an electron mobility of 4.2 cm(2)/(V s), a threshold voltage of 10.5 V, and an on/off current ratio larger than 10(7). More importantly, the method is applicable to simple inkjet processes, which lead to produce high-performance depletion load ZnO inverters through selective deposition of CTDL on ZnO thin films.
URI
http://hdl.handle.net/YU.REPOSITORY/28850http://dx.doi.org/10.1021/am402919f
ISSN
1944-8244
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공과대학 > 화학공학부 > Articles
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