Influence of Series Resistance and Interface State Density on Electrical Characteristics of Ru/Ni/n-GaN Schottky structure

Title
Influence of Series Resistance and Interface State Density on Electrical Characteristics of Ru/Ni/n-GaN Schottky structure
Author(s)
장자순시바프래탑래디권미경[권미경]강희성[강희성]김동석[김동석]이정희[이정희]V. Rajagopal Reddy[V. Rajagopal Reddy]
Keywords
CURRENT-VOLTAGE CHARACTERISTICS; ENERGY-DISTRIBUTION; DIODES; CAPACITANCE; CONTACTS
Issue Date
201310
Publisher
IEEK PUBLICATION CENTER
Citation
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.13, no.5, pp.492 - 499
Abstract
We have investigated the electrical properties of Ru/Ni/n-GaN Schottky structure using current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. The barrier height (Phi(bo)) and ideality factor (n) of Ru/Ni/n-GaN Schottky structure are found to be 0.66 eV and 1.44, respectively. The Phi(bo) and the series resistance (R-S) obtained from Cheung's method are compared with modified Norde's method, and it is seen that there is a good agreement with each other. The energy distribution of interface state density (N-SS) is determined from the I-V measurements by taking into account the bias dependence of the effective barrier height. Further, the interface state density N-SS as determined by Terman's method is found to be 2.14x10(12) cm(-2) eV(-1) for the Ru/Ni/n-GaN diode. Results show that the interface state density and series resistance has a significant effect on the electrical characteristics of studied diode.
URI
http://hdl.handle.net/YU.REPOSITORY/28815http://dx.doi.org/10.5573/JSTS.2013.13.5.492
ISSN
1598-1657
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공과대학 > 전자공학과 > Articles
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