Growth and characterization of a high-quality Al0.45Ga0.55N layer with AlGaN/AlN superlattices

Title
Growth and characterization of a high-quality Al0.45Ga0.55N layer with AlGaN/AlN superlattices
Author(s)
박시현전성란[전성란]
Keywords
THREADING-DISLOCATION-DENSITY; THIN-FILMS; GAN; REDUCTION; FABRICATION; OVERGROWTH; SI
Issue Date
201310
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.63, no.8, pp.1625 - 1629
Abstract
We report the growth and characterization of a Si-doped, n-type AlGaN layer with 45% Al composition. For the application of n-type AlGaN layers with high Al compositions in ultraviolet emitters, we fabricated an n-Al0.45Ga0.55N layer with high crystalline quality and high electrical conductivity by inserting Al0.85Ga0.15N/AlN superlattices (SLs) to prevent cracks prior to growing the n-type AlGaN layer. The dislocation density in the n-AlGaN layer with a 45% Al composition and SLs was less than 2.4 x 10(10) cm(-2), which was lower than the dislocation density of 5.3 x 10(10) cm(-2) for the n-AlGaN layer without SLs. The resistivity, mobility, and free-electron concentration in the n-type Al0.45Ga0.55N layer with SLs were 2.2 x 10(-2) Omega center dot cm, 55.0 cm(2)/V-s, and 5.0 x 10(18) cm(-3) at room temperature, respectively.
URI
http://hdl.handle.net/YU.REPOSITORY/28810http://dx.doi.org/10.3938/jkps.63.1625
ISSN
0374-4884
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공과대학 > 전자공학과 > Articles
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