Electrical Characteristics of Ti/Al Contacts on AlInN:Mg/GaN Heterostructures

Title
Electrical Characteristics of Ti/Al Contacts on AlInN:Mg/GaN Heterostructures
Author(s)
Seongjun Kim[Seongjun Kim]Hee Jin Kim[Hee Jin Kim]Suk Choi[Suk Choi]Zachary Lochner[Zachary Lochner]Jae-Hyun Ryou[Jae-Hyun Ryou]Russell D. Dupuis[Russell D. Dupuis]안광순Hyunsoo Kim[Hyunsoo Kim]
Keywords
TI/AL/MO/AU OHMIC CONTACTS; ALGAN/GAN HETEROSTRUCTURES; TRANSPORT-PROPERTIES; CARRIER TRANSPORT; FILMS; FIELD; TEMPERATURE; TRANSISTORS; MOBILITY; GROWTH
Issue Date
201310
Publisher
IOP PUBLISHING LTD
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v.52, no.10
Abstract
The electrical characteristics of a Ti/Al metal contact on Mg-doped AlInN/GaN heterostructures were investigated using a transmission line model. The as-deposited Ti/Al contact exhibited near Ohmic contact with a specific contact resistance of 1.78 x 10(-2) Omega cm(2), while the thermal annealing performed at 600 degrees C led to better Ohmic contact with a contact resistance of 9.38 x 10(-4) Omega cm(2). This could be attributed to the formation of a direct Ohmic path connecting the contact and the two-dimensional electron gas beneath an AlInN:Mg barrier upon thermal annealing, namely, a spike contact through the indiffusion of Al as verified from secondary ion mass spectroscopy. Current-voltage-temperature measurements showed an insignificant temperature dependence in both the sheet resistance and the contact resistance, which seemed to be associated with the distinctive feature of the spike contact. (C) 2013 The Japan Society of Applied Physics
URI
http://hdl.handle.net/YU.REPOSITORY/28793http://dx.doi.org/10.7567/JJAP.52.10MA07
ISSN
0021-4922
Appears in Collections:
공과대학 > 화학공학부 > Articles
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