Electrical Characteristics of Pt Schottky Contacts on AlInN:Mg/GaN Heterostructures

Title
Electrical Characteristics of Pt Schottky Contacts on AlInN:Mg/GaN Heterostructures
Author(s)
Seongjun Kim[Seongjun Kim]Hee Jin Kim[Hee Jin Kim]Suk Choi[Suk Choi]Jae-Hyun Ryou[Jae-Hyun Ryou]Russell D. Dupuis[Russell D. Dupuis]안광순Hyunsoo Kim[Hyunsoo Kim]
Keywords
FIELD-EFFECT TRANSISTORS; MOLECULAR-BEAM EPITAXY; GAN
Issue Date
201310
Publisher
IOP PUBLISHING LTD
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v.52, no.10
Abstract
The electrical characteristics of Pt Schottky contacts on AlInN:Mg/GaN heterostructures were investigated. A barrier inhomogeneity model applied to temperature-dependent forward current-voltage (I-V) curves revealed the mean barrier height of 1.67 eV and the standard deviation of 0.22 eV. The reverse leakage current could be understood in terms of the Poole-Frenkel emission model, yielding the emission barrier height of 0.26 eV and the high-frequency relative dielectric permittivity of 5.32. On the basis of these obtained values, the continuum of electronic states could be predicted to locate 1.41 eV below the valence band. (C) 2013 The Japan Society of Applied Physics
URI
http://hdl.handle.net/YU.REPOSITORY/28775http://dx.doi.org/10.7567/JJAP.52.10MA05
ISSN
0021-4922
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공과대학 > 화학공학부 > Articles
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