Temperature-dependent Photoluminescence of Boron-doped ZnO Nanorods
- Temperature-dependent Photoluminescence of Boron-doped ZnO Nanorods
- 김종수; S. Kim[S. Kim]; H. Park[H. Park]; G. Nam[G. Nam]; H. Yoon[H. Yoon]; Jin Soo Kim[Jin Soo Kim]; J.-S. Son[J.-S. Son]; 이상헌; J.-Y. Leem[J.-Y. Leem]
- CHEMICAL-VAPOR-DEPOSITION; ARRAY THIN-FILMS; OPTICAL-PROPERTIES; ZINC-OXIDE; HYDROTHERMAL METHOD; AL; NANOSTRUCTURES; EMISSION; ENERGY; GA
- Issue Date
- KOREAN CHEMICAL SOC
- BULLETIN OF THE KOREAN CHEMICAL SOCIETY, v.34, no.11, pp.3335 - 3339
- Boron-doped ZnO (BZO) nanorods were grown on quartz substrates using hydrothermal synthesis, and the temperature-dependence of their photoluminescence (PL) was measured in order to investigate the origins of their PL properties. In the UV range, near-band-edge emission (NBE) was observed from 3.1 to 3.4 eV; this was attributed to various transitions including recombination of free excitons and their longitudinal optical (LO) phonon replicas, and donor-acceptor pair (DAP) recombination, depending on the local lattice configuration and the presence of defects. At a temperature of 12 K, the NBE produces seven peaks at 3.386, 3.368, 3.337, 3.296, 3.258, 3.184, and 3.106 eV. These peaks are, respectively, assigned to free excitons (FX), neutral-donor bound excitons (D degrees X), and the first LO phonon replicas of D degrees X, DAP, DAP-1LO, DAP-2LO, and DAP-3LO. The peak position of the FX and DAP were also fitted to Varshni's empirical formula for the variation in the band gap energy with temperature. The activation energy of FX was about similar to 70 meV, while that of DAP was about similar to 38 meV. We also discuss the low temperature PL near 2.251 eV, related to structural defects.
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