Analysis of the Abnormal Voltage-current Behaviors on Localized Carriers of InGaN/GaN Multiple Quantum Well from Electron Blocking Layer

Title
Analysis of the Abnormal Voltage-current Behaviors on Localized Carriers of InGaN/GaN Multiple Quantum Well from Electron Blocking Layer
Author(s)
김종수G. Nam[G. Nam]B. Kim[B. Kim]D.-Y. Lee[D.-Y. Lee]Jin Soo Kim[Jin Soo Kim]J.-Y. Leem[J.-Y. Leem]
Keywords
LIGHT-EMITTING-DIODES; LOW-TEMPERATURE; EFFICIENCY
Issue Date
201311
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.63, no.9, pp.1784 - 1788
Abstract
The effect of an electron blocking layer (EBL) on the V - I curves for GaN/InGaN multiple quantum wells is investigated. For the first time, we found that the curves intersected at 3.012 V, and we investigated the reason for the intersection. The forward voltage in LEDs with a p-AlGaN EBL is larger than it is without the p-AlGaN EBL at low injection currents because the Mg-doping efficiency for the p-GaN layer is higher than that for the p-AlGaN layer. However, the forward voltage in LEDs with a p-AlGaN EBL is smaller than it is without the p-AlGaN EBL at high injection currents because the carriers overflow from the active layer when the injection current increases in LEDs without a p-AlGaN EBL, in case of LEDs with a p-AlGaN EBL, the carriers are blocked by the EBL.
URI
http://hdl.handle.net/YU.REPOSITORY/28542http://dx.doi.org/10.3938/jkps.63.1784
ISSN
0374-4884
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이과대학 > 물리학과 > Articles
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