Temperature-dependent current-voltage characteristics of Se Schottky contact to n-type Ge

Title
Temperature-dependent current-voltage characteristics of Se Schottky contact to n-type Ge
Author(s)
V. Janardhanam[V. Janardhanam]I. Jyothi[I. Jyothi]안광순최철종[최철종]
Keywords
BARRIER HEIGHT; ELECTRICAL CHARACTERISTICS; MICROSTRUCTURAL EVOLUTION; SERIES RESISTANCE; I-V; DIODES; INP; INHOMOGENEITIES; INSULATOR; JUNCTIONS
Issue Date
201311
Publisher
ELSEVIER SCIENCE SA
Citation
THIN SOLID FILMS, v.546, pp.63 - 68
Abstract
We fabricated Se Schottky contacts to n-type Ge and demonstrated their electrical properties using temperature-dependent current-voltage measurements in the temperature range of 200-300 K. As the temperature decreased, the barrier height decreased and the ideality factor increased. These anomalies could be associated with the barrier height inhomogeneities prevailing at the metal-semiconductor contact. On the assumption of the Gaussian distribution of barrier height, the mean value and standard deviation of barrier height, extracted from the plot of barrier height as a function of q/2kT, were found to be 0.70 and 0.089 eV, respectively. The electric field dependence of the reverse current revealed that the Schottky emission mechanism dominates the current conduction in the reverse bias. (c) 2013 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/28530http://dx.doi.org/10.1016/j.tsf.2013.04.074
ISSN
0040-6090
Appears in Collections:
공과대학 > 화학공학부 > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE