Selenization mechanisms of Sn and Zn investigated using in situ high-temperature X-ray diffraction

Title
Selenization mechanisms of Sn and Zn investigated using in situ high-temperature X-ray diffraction
Author(s)
한재성전소영김우경
Keywords
BILAYER PRECURSOR FILM; REACTION-KINETICS; THIN-FILMS; SYSTEM
Issue Date
201311
Publisher
ELSEVIER SCIENCE SA
Citation
THIN SOLID FILMS, v.546, pp.321 - 325
Abstract
The selenization mechanism of Sn and Zn thin films was investigated by in situ high-temperature X-ray diffraction analysis of glass/Mo/Sn(/Se) and glass/Mo/Zn(/Se) precursors. The Sn and Zn layers were deposited by sputtering, and amorphous Se layer was added by evaporation. Based on the results of isothermal reactions at different set temperatures, the kinetic parameters for the transformation of the SnSe2 to SnSe phases and the selenization of Zn to ZnSe were estimated. It was found that severe Sn loss also occurred during the selenization of glass/Mo/Sn/Se precursor, while Zn loss was relatively negligible during the selenization of glass/Mo/Zn/Se precursor. (C) 2013 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/28528http://dx.doi.org/10.1016/j.tsf.2013.04.084
ISSN
0040-6090
Appears in Collections:
중앙도서관 > rims journal
공과대학 > 화학공학부 > Articles
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