InGaN-based Resonant-cavity Light-emitting Diodes with Dielectric-distributed Bragg Reflectors

Title
InGaN-based Resonant-cavity Light-emitting Diodes with Dielectric-distributed Bragg Reflectors
Author(s)
박시현김재훈[김재훈]
Issue Date
201311
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.63, no.10, pp.2008 - 2011
Abstract
An InGaN-based resonant-cavity light-emitting diode (RC-LED) chip with a large chip area of 1 x 1 mm(2) was fabricated using ZrO2/SiO2 dielectric-distributed Bragg reflectors (DBRs) on both sides of the cavity. After the growth of InGaN-based n- and p-epitaxial layers on a sapphire substrate, ZrO2/SiO2 layers for one DBR were deposited on it; then, holes with similar to 10-mu m diameters were patterned through the DBR layers. The DBR layer's side of the whole sample was thermally bonded to a silicon substrate by using Au bonding metal; then, the sapphire substrate of the sample was removed using a laser lift-off technique. ZrO2/SiO2 layers for the other DBR were deposited on n-GaN for complete formation of the cavity. Through the electrical and the optical characterizations, we showed that our RC-LED has the improved optical output power and forward directionality in comparison with a conventional LED.
URI
http://hdl.handle.net/YU.REPOSITORY/28485http://dx.doi.org/10.3938/jkps.63.2008
ISSN
0374-4884
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공과대학 > 전자공학과 > Articles
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