Temperature-dependent current-voltage characteristics and reverse leakage conduction mechanism of Pt/n-type Si0.85Ge0.15 schottky rectifiers

Title
Temperature-dependent current-voltage characteristics and reverse leakage conduction mechanism of Pt/n-type Si0.85Ge0.15 schottky rectifiers
Author(s)
V. Janardhanam[V. Janardhanam]최철종[최철종]이훈기[이훈기]길연호[길연호]심규환[심규환]안광순
Keywords
MOLECULAR-BEAM EPITAXY; BARRIER HEIGHTS; DIODE; EXTRACTION; TRANSISTOR; TRANSPORT; JUNCTIONS; CONTACTS
Issue Date
201205
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.60, no.10, pp.1498 - 1503
Abstract
We investigated the temperature dependence of the current-voltage (I-V) characteristics and the reverse leakage conduction mechanism of Pt Schottky contacts on n-type Si0.85Ge0.15 measured in the temperature range of 300-450 K. With increasing temperature, the Schottky barrier height and the ideality factor increased and decreased, respectively. The effective barrier height, extracted from a Richardson plot of the saturation current, was found to be 0.61 eV. A spatially inhomogeneous nature of the Pt/on n-type Si0.85Ge0.15 Schottky contact could be the main cause of the temperature dependence of the barrier height, the ideality factor, and the series resistance. The electric field dependence of the reverse leakage current showed that Schottky emission was the dominant mechanism in the reverse leakage current for all temperatures considered.
URI
http://hdl.handle.net/YU.REPOSITORY/28369http://dx.doi.org/10.3938/jkps.60.1498
ISSN
0374-4884
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공과대학 > 화학공학부 > Articles
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