Temperature Dependence of the Optical Properties of High-density GaAs Quantum Dots

Title
Temperature Dependence of the Optical Properties of High-density GaAs Quantum Dots
Author(s)
김종수리얀패트릭스미스이상준[이상준]노삼규[노삼규]김진수[김진수]임재영[임재영]송진동[송진동]
Keywords
DROPLET EPITAXY; LINE-SHAPE; PHOTOLUMINESCENCE; FABRICATION; RELAXATION; RINGS; TIME
Issue Date
201205
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.60, no.9, pp.1428 - 1432
Abstract
We investigate the effect of the quantum dot (QD) density on the thermal escape and the re-trapping processes of carriers for unstrained GaAs/AlGaAs QDs through temperature-dependent photoluminescence measurements. We fabricated high-density GaAs QDs (8.4 x 10(10)/cm(2), dot-dot distance similar to 34 nm) on an Al0.3Ga0.7As/GaAs (111) A surface by using droplet epitaxy. The average lateral size and height of the GaAs QDs are 24 and 6 nm, respectively. Temperature-dependent photoluminescence (PL) studies show that high-density GaAs QDs undergo a sigmoidal-shape energy shift. The sigmoidal dependence of the PL peak energy can be explained by thermal escaping of carriers followed by re-trapping by QDs. Our analysis indicates that the re-trapping probability of thermally-escaped carriers increases with decreasing dot-to-dot distance (corresponding to an increase in the QD density).
URI
http://hdl.handle.net/YU.REPOSITORY/28311http://dx.doi.org/10.3938/jkps.60.1428
ISSN
0374-4884
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이과대학 > 물리학과 > Articles
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