Frequency dependent series resistance and interface states in Au/bio-organic/n-GaN Schottky structures based on DNA biopolymer

Title
Frequency dependent series resistance and interface states in Au/bio-organic/n-GaN Schottky structures based on DNA biopolymer
Author(s)
장자순시바프래탑래디이정희[이정희]
Keywords
BARRIER DIODES; CONDUCTANCE; TEMPERATURE; DENSITY; DEVICES; FILMS
Issue Date
201312
Publisher
ELSEVIER SCIENCE SA
Citation
SYNTHETIC METALS, v.185, pp.167 - 171
Abstract
The frequency dependent capacitance-voltage (C-V) and conductance-voltage (G/omega-V) characteristics of Au/bio-organic/n-GaN Schottky barrier diodes (SBDs) based on DNA biopolymer is investigated in the frequency range of 200 KHz-2 MHz at room temperature. The electrical characteristics of SBDs with DNA biopolymer is analyzed based on voltage and frequency dependent series resistance and frequency dependent interface states (N-SS). The values of measured capacitance C-m and conductance G(m) under both reverse and forward bias have been corrected for the effect of series resistance (R-S) to obtain the real diode capacitance and the conductance values. The extracted corrected capacitance and conductance are found to be strongly dependent on bias voltage and frequencies for the Au/DNA/n-GaN SBDs. The R-S-V plots exhibit a peak decrease the increasing frequencies. It is also noted that the interface states decreases exponentially with increasing frequency. The C-V-f and G/omega-V-f characteristics confirm that the series R-S and N-SS of the Au/DNA/n-GaN are significant parameters that strongly affect the electrical parameters in metal/bio-organic/inorganic semiconductor structures. (C) 2013 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/28296http://dx.doi.org/10.1016/j.synthmet.2013.10.012
ISSN
0379-6779
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공과대학 > 전자공학과 > Articles
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