A comparison of the recombination efficiency in green-emitting InGaN quantum dots and quantum wells

Title
A comparison of the recombination efficiency in green-emitting InGaN quantum dots and quantum wells
Author(s)
박일규권민기[권민기]박성주[박성주]
Issue Date
201205
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.60, no.10, pp.1666 - 1670
Abstract
A comparative investigation of the recombination efficiency of green-emitting InGaN quantum dots (QDs) and quantum wells (QWs) is reported in this paper. Optical investigations using temperature dependent photoluminescence (PL) results showed that the internal quantum efficiency of InGaN QDs at room temperature was 8.7 times larger than that found for InGaN QWs because they provided dislocation-free recombination sites for the electrical charge carriers. The excitation-power-dependent PL and electroluminescence results showed that the effect of the polarization-induced electric field on the recombination process of electrical charge carriers in the QDs was negligibly small whereas it was dominant in the QWs. These results indicate that InGaN QDs are more beneficial than QWs in improving the luminescence efficiency of LEDs in the green spectral range.
URI
http://hdl.handle.net/YU.REPOSITORY/28293http://dx.doi.org/10.3938/jkps.60.1666
ISSN
0374-4884
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공과대학 > 전자공학과 > Articles
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