Layer-Controlled, Wafer-Scale, and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition

Title
Layer-Controlled, Wafer-Scale, and Conformal Synthesis of Tungsten Disulfide Nanosheets Using Atomic Layer Deposition
Author(s)
김수현송정규[송정규]박주상[박주상]이원선[이원선]최태진[최태진]정한얼[정한얼]이창완[이창완]황성환[황성환]정재훈Clement Lansalot-Matras[Clement Lansalot-Matras]명재민[명재민]김형준[김형준]
Keywords
MOS2 THIN-LAYERS; SINGLE-LAYER; LARGE-AREA; WS2 NANOTUBES; VALLEY POLARIZATION; INTEGRATED-CIRCUITS; MONOLAYER MOS2; TRANSISTORS; GROWTH; PHOTOLUMINESCENCE
Issue Date
201312
Publisher
AMER CHEMICAL SOC
Citation
ACS NANO, v.7, no.12, pp.11333 - 11340
Abstract
The synthesis of atomically thin transition-metal disulfides (MS2) with layer controllability and large-area uniformity is an essential requirement for their application in electronic and optical devices. In this work, we describe a process for the synthesis of WS2 nanosheets through the sulfurization of an atomic layer deposition (AID) WO, film with systematic layer controllability and wafer-level uniformity. The X-ray photoemission spectroscopy, Raman, and photoluminescence measurements exhibit that the AID-based WS2 nanosheets have good stoichiometry, clear Raman shift, and bandgap dependence as a function of the number of layers. The electron mobility of the monolayer WS2 measured using a field-effect transistor (FET) with a high-k dielectric gate insulator is shown to be better than that of CVD-grown WS2, and the subthreshold swing is comparable to that of an exfoliated MoS2 FET device. Moreover, by utilizing the high conformality of the AID process, we have developed a process for the fabrication of WS2 nanotubes.
URI
http://hdl.handle.net/YU.REPOSITORY/28237http://dx.doi.org/10.1021/nn405194e
ISSN
1936-0851
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공과대학 > 신소재공학부 > Articles
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