Effect of Substrate Temperature on Preferred Orientation and Ga Composition Profile of Co-Evaporated Cu(In,Ga)Se-2

Title
Effect of Substrate Temperature on Preferred Orientation and Ga Composition Profile of Co-Evaporated Cu(In,Ga)Se-2
Author(s)
전찬욱박순록백주영윤태영한혜진김경보[김경보]
Keywords
FILM SOLAR-CELLS; EFFICIENCY
Issue Date
201312
Publisher
TAYLOR & FRANCIS LTD
Citation
MOLECULAR CRYSTALS AND LIQUID CRYSTALS, v.585, no.1, pp.114 - 120
Abstract
Cu(In,Ga)Se-2 (CIGS) films were deposited by the three-stage co-evaporation process and the effect of the second stage substrate temperature on device performance were evaluated. With increasing the substrate temperature, the preferred orientation of CIGS was found to be changed from (112) to (220), however, the Ga double grading became weaker and nearly flat for the (220) textured CIGS grown at 570 degrees C. Despite of (220) preferred orientation, the conversion efficiency decreased mainly due to the poor fill factor and open circuit voltage. It is suggested that increasing the growth temperature in order to get (220) preferred CIGS may destroy the advantage of double-graded Ga profile.
URI
http://hdl.handle.net/YU.REPOSITORY/28192http://dx.doi.org/10.1080/15421406.2013.850941
ISSN
1542-1406
Appears in Collections:
공과대학 > 화학공학부 > Articles
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