Carrier Transport Mechanism of a Low Resistance Ti/Al Ohmic Contact on (11(2)over-bar2) Semipolar n-Type GaN

Title
Carrier Transport Mechanism of a Low Resistance Ti/Al Ohmic Contact on (11(2)over-bar2) Semipolar n-Type GaN
Author(s)
정성민[정성민]이성남[이성남]안광순김현수[김현수]
Keywords
A-PLANE GAN; MULTIPLE-QUANTUM WELLS; DIODES
Issue Date
201206
Publisher
IOP PUBLISHING LTD
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v.51, no.6
Abstract
The carrier transport mechanism of a low resistance Ti/Al Ohmic contact to (11 (2) over bar2) semipolar n-type GaN grown on m-plane sapphire substrate was investigated. Thermal annealing led to an excellent Ohmic contact with a specific contact resistance of 3.2 x 10(-4) Omega cm(2). Current-voltage-temperature measurements revealed insignificant changes in the specific contact resistance with respect to temperature, which is evidence of a tunneling transport. Based on the thermionic field emission model, a very low Schottky barrier height of 3 meV and barrier width of 1 nm were obtained due to increased interfacial carriers of 9.2 x 10(18) cm(-3), resulting in excellent Ohmic contact to semipolar n-type GaN. (c) 2012 The Japan Society of Applied Physics
URI
http://hdl.handle.net/YU.REPOSITORY/28143http://dx.doi.org/10.1143/JJAP.51.061001
ISSN
0021-4922
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공과대학 > 화학공학부 > Articles
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