Magnetoelectric properties of Tb0.3Dy0.7Fe1.92/Pb(Zr (x) Ti1-x )O-3 bilayer thin films

Title
Magnetoelectric properties of Tb0.3Dy0.7Fe1.92/Pb(Zr (x) Ti1-x )O-3 bilayer thin films
Author(s)
이희영황성옥구창영이재열류정호[류정호]김종우[김종우]
Keywords
SOL-GEL PROCESS; PIEZOELECTRIC PROPERTIES; COMPOSITE
Issue Date
201312
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.63, no.12, pp.2354 - 2357
Abstract
Magnetoelectric Tb0.3Dy0.7Fe1.92(Terfenol-D)/PbZr (x) Ti1-x O-3(PZT) bilayer thin films were deposited on (111)-oriented Pt/Ti/SiO2/Si < 100 > substrates. The PZT layers with different compositions (x = 0.3 and 0.52) were grown on the substrates by using the sol-gel method. Terfenol-D layers were deposited on the PZT-film-coated substrate by ion beam sputtering at room temperature with a dot-type patterned metal shadow mask. The structural characteristics and the ferroelectric, ferromagnetic and magnetoelectric(ME) properties of the Terfenol-D/PZT bilayer thin films were investigated. In our results, the maximum remnant polarization, 2P (r) were similar to 60 A mu C/cm(2) for Terfenol-D/PZT(30/70) (Zr/Ti ratio = 30/70). The magnetization and the ME voltage coefficients were identical regardless of the Zr/Ti composition of PZT. The ME voltage coefficients of the films were over 400 mV/cm center dot Oe, which were about 4 times higher than the values reported for other bilayer structures.
URI
http://hdl.handle.net/YU.REPOSITORY/28117http://dx.doi.org/10.3938/jkps.63.2354
ISSN
0374-4884
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공과대학 > 신소재공학부 > Articles
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