Multiferroic 0.8BiFeO(3)-0.2BaTiO(3) Thin Films Prepared by Pulsed Laser Deposition
- Multiferroic 0.8BiFeO(3)-0.2BaTiO(3) Thin Films Prepared by Pulsed Laser Deposition
- 김경만; 황성옥; 윤동진; 구창영; 이희영
- Issue Date
- TAYLOR & FRANCIS LTD
- FERROELECTRICS, v.454, no.1, pp.47 - 50
- 0.8BiFeO(3)-0.2BaTiO(3) thin films on (111) oriented Pt/TiO2/SiO2/Si < 100 > substrates were prepared by pulsed laser deposition. Various deposition parameters, such as deposition temperature and oxygen pressure, have been studied and optimized to get better quality films. Based on the X-ray diffraction analysis, single phase perovskite films were obtained at the deposition temperature of 700 degrees C and an oxygen partial pressure of 10 mTorr and 330 mTorr. The BFO-BTO film deposited under higher oxygen pressure, i.e. 330 mTorr, showed smaller leakage current in electrical property, (010) preferred orientation in crystal structure, and enhanced ferromagnetic property compared to the film deposited at 10 mTorr. From our results, we suggest 0.8BiFeO(3)-0.2BaTiO(3) solid solution thin film for one of candidates to resolving the current poor dielectric property of single BFO multiferroic thin film by a partial substitution of Ba and Ti ions for Bi and Fe sites of BiFeO3 structure, respectively.
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