Characteristics of lithium phosphorous oxynitride thin films deposited by metal-organic chemical vapor deposition technique

Title
Characteristics of lithium phosphorous oxynitride thin films deposited by metal-organic chemical vapor deposition technique
Author(s)
박진호김홍탁문태홍진상완[진상완]박호영[박호영]
Issue Date
201312
Publisher
ELSEVIER SCIENCE BV
Citation
JOURNAL OF POWER SOURCES, v.244, pp.641 - 645
Abstract
Lithium phosphorous oxynitride (LiPON) thin films are deposited by metal-organic chemical vapor deposition (MOCVD) technique using lithium dipivaloylmethane (Li(DPM)), triethyl phosphate (TEP) and NH3 as precursor materials, and effects of substrate temperature on the deposition rate and thin film properties are investigated. The deposition rate of LiPON films increases with rising substrate temperature, and as-deposited UPON films exhibit the typical amorphous phase. The minimum activation temperature for the film deposition is 500 degrees C, and the activation energy is estimated to be 102.4 kJ mole(-1). Concentrations of P and N element in the film are quite low at the temperature of 500 degrees C, but increase dramatically above 550 degrees C. Oxygen concentration in the film is inversely proportional to that of nitrogen, and the ratio of Li to P stays nearly constant with rising substrate temperature. The ratio of triply coordinated nitrogen to doubly coordinated nitrogen (N-t/N-d) gradually increases with rising substrate temperature, implying that the ionic conductivity is improved. The ionic conductivity reaches close to 2.95 x 10(-7) Scm(-1) as the substrate temperature is raised to 575 degrees C, and the value stays within the well-known value range (10(-6)-10(-8) Scm(-1)) of LiPON films. (C) 2013 Elsevier B.V. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/28074http://dx.doi.org/10.1016/j.jpowsour.2012.12.109
ISSN
0378-7753
Appears in Collections:
공과대학 > 화학공학부 > Articles
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