Depinning of the Fermi level at the Ge Schottky interface through Se treatment

Title
Depinning of the Fermi level at the Ge Schottky interface through Se treatment
Author(s)
V. Janardhanam[V. Janardhanam]Hyung-Joong Yun[Hyung-Joong Yun]Jouhan Lee[Jouhan Lee]V. Rajagopal Reddy[V. Rajagopal Reddy]Hyobong Hong[Hyobong Hong]안광순Chel-Jong Choi[Chel-Jong Choi]
Keywords
CONTACT
Issue Date
201312
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Citation
SCRIPTA MATERIALIA, v.69, no.11-12, pp.809 - 811
Abstract
Depinning of the Fermi level at Al/Ge junctions was achieved through Se treatment. Al contacts to n- and p-type Ge with Se treatment exhibited ohmic and Schottky behaviors, respectively. During Se treatment, in addition to surface passivation by Se atoms, the chemical reaction between Se and Ge resulted in the formation of a partially ionic Se-Ge alloy film. This led to the reduction of surface states, which was responsible for the Fermi-level depinning of Ge. (C) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/28064http://dx.doi.org/10.1016/j.scriptamat.2013.09.004
ISSN
1359-6462
Appears in Collections:
공과대학 > 화학공학부 > Articles
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