Synthesis of Cu2ZnSnS4 thin film absorbers by sulfurizing dip-coated precursors

Title
Synthesis of Cu2ZnSnS4 thin film absorbers by sulfurizing dip-coated precursors
Author(s)
김규호뜨롱 뚜안 마우[뜨롱 뚜안 마우]
Keywords
SOLAR-CELLS; OPTICAL-PROPERTIES
Issue Date
201206
Publisher
KOREAN ASSOC CRYSTAL GROWTH, INC
Citation
JOURNAL OF CERAMIC PROCESSING RESEARCH, v.13, no.3, pp.301 - 304
Abstract
Cu2ZnSnS4 (CZTS) thin films, a potential candidate for the absorber layers of solar cells, were successfully deposited on soda lime glass substrates by sulfurizing dip-coated precursors. This is a simple and low-cost process. In this method, the precursor films were obtained by several cycles of dipping and air-jet cutting to rinse the film and make it flat, followed by drying at 200 degrees C for 15 minutes. The solutions that were used in the dipping process contained copper (II) acetate monohydrate, zinc (II) acetate dehydrate, tin (II) chloride dehydrate and thiourea, dissolved in a solution of water and ethanol (30% vol). By sulfurizing the precursors in Ar + H2S (5%) gas to prevent oxidation, a CZTS single phase can be obtained with a ratio of Cu/[Zn + Sn] = 0.89, Zn/Sn = 1.03 and S/metal = 1.01. The films had a band gap of about 1.5 eV and the absorption coefficient was higher than 10(4) cm(-1). The electrical properties of the films were shown to be p-type semiconductors with a carrier concentration of 10(18) cm(-3). The films can be applied as the absorber layers in solar cells.
URI
http://hdl.handle.net/YU.REPOSITORY/28032
ISSN
1229-9162
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공과대학 > 신소재공학부 > Articles
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