Electrical, Optical, and Structural Properties of ITO/IZTO Double Layer Films Deposited by RF Magnetron Sputtering

Title
Electrical, Optical, and Structural Properties of ITO/IZTO Double Layer Films Deposited by RF Magnetron Sputtering
Author(s)
이희영마리야느푸트리김기환구창영이정아[이정아]김정주[김정주]
Keywords
OXIDE THIN-FILMS; TRANSPARENT CONDUCTING OXIDES; SENSITIZED SOLAR-CELLS; IN2O3; SN; THICKNESS; GLASS
Issue Date
201312
Publisher
AMER SCIENTIFIC PUBLISHERS
Citation
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, v.8, no.6, pp.498 - 503
Abstract
Indium zinc tin oxide (IZTO) thin films with a nominal composition corresponding to In0.6Zn0.2Sn0.2O1.5 have been developed as an alternative material to indium tin oxide (ITO). Double layered, transparent, conducting ITO thin films were deposited on an IZTO film with 20 at% of each Sn and Zn using RF magnetron sputtering. ITO films were deposited on the IZTO film as a function of deposition time. The as-deposited double layered films were annealed using rapid thermal annealing at elevated temperatures under the following atmospheres: air, argon gas, and forming gas. The structural, electrical, and optical properties of the ITO/IZTO double layer films were investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), Hall measurement, and UV-Visible-NIR spectrophotometry. The electrical resistivity of the films decreased owing to the ITO layers deposited on the IZTO thin film. Optimally, the electrical resistivity of double layered films was lowered to 2.9 x 10(-4) Omega cm after annealing in argon gas atmosphere with an ITO layer deposition time of 20 min.
URI
http://hdl.handle.net/YU.REPOSITORY/28021http://dx.doi.org/10.1166/jno.2013.1534
ISSN
1555-130X
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공과대학 > 신소재공학부 > Articles
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