Growth of single-phase CuInAlSe2 thin films by using pulsed laser deposition and selenization

Abstract

CuInAlSe2 (CIAS) thin films were deposited layer by layer, with a certain stacking order on a substrate by using pulsed laser deposition (PLD) and selenization. The precursor was selenied by holding the temperatures for 10 minutes each at 160 A degrees C, 260 A degrees C, 300 A degrees C, and 500 A degrees C. The crystalline phase, the composition, the morphology, and the optical and electrical properties of the CIAS thin films were characterized. The thin films were single-phase chalcopyrite quaternaries with band gaps above 1.9 eV.