Growth of single-phase CuInAlSe2 thin films by using pulsed laser deposition and selenization

Title
Growth of single-phase CuInAlSe2 thin films by using pulsed laser deposition and selenization
Author(s)
김규호퓌안티[퓌안티]
Keywords
CU(IN,AL)SE-2 SOLAR-CELLS; OPTICAL-PROPERTIES; EFFICIENCY; CU(IN,GA)SE-2; COPPER
Issue Date
201206
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.60, no.12, pp.2001 - 2006
Abstract
CuInAlSe2 (CIAS) thin films were deposited layer by layer, with a certain stacking order on a substrate by using pulsed laser deposition (PLD) and selenization. The precursor was selenied by holding the temperatures for 10 minutes each at 160 A degrees C, 260 A degrees C, 300 A degrees C, and 500 A degrees C. The crystalline phase, the composition, the morphology, and the optical and electrical properties of the CIAS thin films were characterized. The thin films were single-phase chalcopyrite quaternaries with band gaps above 1.9 eV.
URI
http://hdl.handle.net/YU.REPOSITORY/28015http://dx.doi.org/10.3938/jkps.60.2001
ISSN
0374-4884
Appears in Collections:
공과대학 > 신소재공학부 > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE