Growth of single-phase CuInAlSe2 thin films by using pulsed laser deposition and selenization
- Title
- Growth of single-phase CuInAlSe2 thin films by using pulsed laser deposition and selenization
- Author(s)
- 김규호; 퓌안티[퓌안티]
- Keywords
- CU(IN,AL)SE-2 SOLAR-CELLS; OPTICAL-PROPERTIES; EFFICIENCY; CU(IN,GA)SE-2; COPPER
- Issue Date
- 201206
- Publisher
- KOREAN PHYSICAL SOC
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.60, no.12, pp.2001 - 2006
- Abstract
- CuInAlSe2 (CIAS) thin films were deposited layer by layer, with a certain stacking order on a substrate by using pulsed laser deposition (PLD) and selenization. The precursor was selenied by holding the temperatures for 10 minutes each at 160 A degrees C, 260 A degrees C, 300 A degrees C, and 500 A degrees C. The crystalline phase, the composition, the morphology, and the optical and electrical properties of the CIAS thin films were characterized. The thin films were single-phase chalcopyrite quaternaries with band gaps above 1.9 eV.
- URI
- http://hdl.handle.net/YU.REPOSITORY/28015http://dx.doi.org/10.3938/jkps.60.2001
- ISSN
- 0374-4884
- Appears in Collections:
- 공과대학 > 신소재공학부 > Articles
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML