Preparation and application of the 3C-SiC substrate to piezoelectric micro cantilever transducers

Title
Preparation and application of the 3C-SiC substrate to piezoelectric micro cantilever transducers
Author(s)
심재술최기영[최기영]최덕균[최덕균]이동연고성호[고성호]박재홍[박재홍]
Keywords
UNIMORPH CANTILEVERS; SENSITIVITY; FILM
Issue Date
201207
Publisher
SPRINGER
Citation
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v.108, no.1, pp.161 - 170
Abstract
This study examines the fabrication process and mechanical properties of piezoelectric films with the substrate, which is made from silicon carbide. After depositing the PZT thick film on silicon carbide substrate and silicon substrate respectively, it was shown that silicon carbide substrate formed a stable interface with PZT thick film up to 950 A degrees C, compared with silicon substrate. In addition, the dielectric constant of the PZT thick film sintered at 950 A degrees C on a silicon carbide substrate was 843, and this value was about over 25 % improved value compared with that on a silicon substrate. A thick film piezoelectric micro transducer of a micro cantilever type was fabricated by using a multifunctional 3C-SiC substrate. The fabricated micro cantilever was a micro cantilever with multiple thin films on either silicon or silicon carbide substrate. The piezoelectric thick-film micro cantilever that was fabricated by using a SiC substrate showed excellent mechanical and thermal properties. The piezoelectric micro cantilever on the SiC substrate shows an excellent sensitivity towards the change of mass compared with the piezoelectric micro cantilever on the Si substrate.
URI
http://hdl.handle.net/YU.REPOSITORY/27633http://dx.doi.org/10.1007/s00339-012-6866-x
ISSN
0947-8396
Appears in Collections:
공과대학 > 기계공학부 > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE