Reflow of Phosphorous Silicate Glass Layer Formed on Textured Si Surface in Crystalline Si Solar Cells

Title
Reflow of Phosphorous Silicate Glass Layer Formed on Textured Si Surface in Crystalline Si Solar Cells
Author(s)
Jin-Sung Kim[Jin-Sung Kim]Min-Woo Seo[Min-Woo Seo]안광순Chel-Jong Choi[Chel-Jong Choi]
Keywords
THERMAL-OXIDATION; STRESS; REFLECTANCE; SIMULATION
Issue Date
201207
Publisher
AMER SCIENTIFIC PUBLISHERS
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.12, no.7, pp.5700 - 5703
Abstract
We have investigated the reflow behavior of phosphorus silicate glass (PSG) layer formed on textured Si surface using transmission electron microscopy and simulation. For conventional wet oxidation process, stress-dependent surface reaction and stress-dependent oxidant diffusion led to the oxidation retardation in both convex and concave regions of the textured Si surface, respectively. However, PSG film formed by POCl3-diffusion underwent reflow, resulting in the formations of thinner and thicker PSG films in convex and concave regions, respectively. Simulation results showed that the reflow of PSG films causes lateral thermal mismatch stresses to increase and decrease in convex and concave regions, respectively.
URI
http://hdl.handle.net/YU.REPOSITORY/27616http://dx.doi.org/10.1166/jnn.2012.6403
ISSN
1533-4880
Appears in Collections:
공과대학 > 화학공학부 > Articles
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