Conduction Mechanism of Se Schottky Contact to n-Type Ge

Title
Conduction Mechanism of Se Schottky Contact to n-Type Ge
Author(s)
V. Janardhanam[V. Janardhanam]박양규[박양규]윤형중[윤형중]안광순최철종[최철종]
Keywords
BARRIER HEIGHT; JUNCTIONS; DIODES
Issue Date
201207
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE ELECTRON DEVICE LETTERS, v.33, no.7, pp.949 - 951
Abstract
The conduction mechanism of Se/n-type-Ge Schottky diodes is investigated using temperature-dependent current-voltage (I-V) characteristics. The presence of microscopic inhomogeneity at the Se/Ge interface could be the primary cause of the differences between the barrier heights measured from the I-V and capacitance-voltage (C-V) characteristics. The position of the quasi-Fermi level suggested the dominance of thermionic emission in the forward bias region. The electric field dependence of the reverse current revealed that Schottky emission, along with the generation mechanism, has dominance over the current conduction in the reverse bias region.
URI
http://hdl.handle.net/YU.REPOSITORY/27610http://dx.doi.org/10.1109/LED.2012.2196750
ISSN
0741-3106
Appears in Collections:
공과대학 > 화학공학부 > Articles
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