Properties of CISe2 Thin Films Deposited by a Solution-Based Method for Photovoltaic Applications

Title
Properties of CISe2 Thin Films Deposited by a Solution-Based Method for Photovoltaic Applications
Author(s)
류시옥이진영류상욱[류상욱]이태진
Keywords
CUINSE2
Issue Date
201208
Publisher
TAYLOR & FRANCIS LTD
Citation
MOLECULAR CRYSTALS AND LIQUID CRYSTALS, v.564, pp.147 - 154
Abstract
The influences of the post thermal treatment conditions on the physical, structural, surface morphological and optical properties of CISe2 thin films deposited by a non-vacuum spray process were investigated for solar cell applications. In order to study the effects of thermal annealing on the films, the annealing temperature of the as-deposited CISe2 thin films were varied from 300 degrees C to 500 degrees C. The estimated optical band gaps of the as-deposited CuInSe2 film and the film annealed at 500 degrees C were similar to 1.48 eV and similar to 1.06 eV, respectively. A tetragonal chalcopyrite structure of CuInSe2 was identified in XRD measurement. From the XRD analysis, it was confirmed that the crystal growth of the CuInSe2 are affected by the annealing temperature. The film annealed at 500 degrees C shows the best crystallinity. SEM image shows that the thickness and the grain size of the film annealed at 500 degrees C are around 2.66 mu m and 40.22 nm, respectively. The identified chemical binding states of the CuInSe2 film annealed at the optimum annealing temperature were confirmed through XPS analysis. The average particle size of the film was determined using TEM and its value was around 10.6 nm.
URI
http://hdl.handle.net/YU.REPOSITORY/27548http://dx.doi.org/10.1080/15421406.2012.697425
ISSN
1542-1406
Appears in Collections:
공과대학 > 화학공학부 > Articles
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