OPTICAL PROPERTIES OF SELENIZED Cu2ZnSnSe4 FILMS FROM A Cu-Zn-Sn METALLIC PRECURSOR

Title
OPTICAL PROPERTIES OF SELENIZED Cu2ZnSnSe4 FILMS FROM A Cu-Zn-Sn METALLIC PRECURSOR
Author(s)
김규호아말무하마드
Keywords
THIN-FILMS; CONSTANTS; THICKNESS
Issue Date
201208
Publisher
NATL INST R&D MATERIALS PHYSICS
Citation
CHALCOGENIDE LETTERS, v.9, no.8, pp.345 - 353
Abstract
Cu2ZnSnSe4 thin films compound were prepared by selenization of sputtered metallic alloy precursor. The as-selenized films were characterized by X-Ray diffractometer (XRD), scanning electron microscopy (SEM), energy dispersive X-ray spectrometry (EDS), and atomic force microscopy (AFM). The optical constants of CZTSe films were estimated from the analysis of the transmission and reflection spectra measured by UV-Vis-NIR double beam spectrophotometer in the wavelength region of 300-2000 nm. It was found that the direct optical band gap values of CZTSe were around 1.0 eV with absorption coefficient more than 10(4) cm(-1) for all CZTSe samples. The other optical properties of CZTSe films such as refractive index dispersion, single oscillator parameters, the high-frequency dielectric constant, the carrier concentration to the effective mass ratio and the electric free carrier susceptibility were discussed and found to be affected by impurities and microstructure of films as a result of different selenization temperatures applied.
URI
http://hdl.handle.net/YU.REPOSITORY/27539
ISSN
1584-8663
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공과대학 > 신소재공학부 > Articles
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