Property of Cu(In,Ga)Se-2 Absorption Layer Produced using a Proximity Selenization Method

Title
Property of Cu(In,Ga)Se-2 Absorption Layer Produced using a Proximity Selenization Method
Author(s)
전찬욱이상환[이상환]이은우[이은우]이윤수[이윤수]김보성[김보성]박상욱
Keywords
THIN-FILMS
Issue Date
201208
Publisher
TAYLOR & FRANCIS LTD
Citation
MOLECULAR CRYSTALS AND LIQUID CRYSTALS, v.565, pp.167 - 172
Abstract
Cu(In,Ga)Se-2 thin films were prepared using co-sputtering and proximity selenization. This new method supplies Se by closely attaching opposite a metal precursor. CuInSe2 thin film was produced at 280 degrees C, and consisted of small structures. As the temperature was increased, more Ga was substituted in place of In, while the X-ray peak of the CuInSe2 shifted to the right. A thin film with a Cu:In:Ga:Se ratio of 1:0.7:0.3:2 was obtained at 480 degrees C, which is comparatively lower than the temperature needed when using Se vapor. This grew into crystals with a diameter of 3-5 mu m.
URI
http://hdl.handle.net/YU.REPOSITORY/27537http://dx.doi.org/10.1080/15421406.2012.693322
ISSN
1542-1406
Appears in Collections:
공과대학 > 화학공학부 > Articles
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