Carrier transport mechanism of Se/n-type Si Schottky diodes

Title
Carrier transport mechanism of Se/n-type Si Schottky diodes
Author(s)
V. Janardhanam[V. Janardhanam]박양규[박양규]안광순최철종[최철종]
Keywords
CURRENT-VOLTAGE CHARACTERISTICS; CONDUCTION MECHANISM; ELECTRON-TRANSPORT; BARRIER-HEIGHT; CONTACTS; RECTIFIERS; PARAMETERS; EXTRACTION
Issue Date
201209
Publisher
ELSEVIER SCIENCE SA
Citation
JOURNAL OF ALLOYS AND COMPOUNDS, v.534, pp.37 - 41
Abstract
The carrier transport mechanism of Se Schottky contacts to an n-type Si substrate were investigated using current-voltage (I-V) and capacitance-voltage (C-V) characteristics. The barrier height and ideality factor measured from the forward bias I-V characteristics were 0.72 eV and 1.2, respectively. A nearly identical barrier height was extracted with the Norde method. However, the C-V characteristics revealed a barrier height of 0.91 eV. The relatively large discrepancy between the Schottky barrier heights measured from the I-V and C-V characteristics could be attributed to the inhomogeneity of the barrier heights across the contact. Thermionic emission dominated the current conduction mechanism in the forward bias region. The primary process involved in the leakage current could be associated with lowering of the Schottky barrier in which the carriers were emitted over the potential barrier by the absorption of thermal energy. (C) 2012 Elsevier B. V. All rights reserved.
URI
http://hdl.handle.net/YU.REPOSITORY/27368http://dx.doi.org/10.1016/j.jallcom.2012.04.031
ISSN
0925-8388
Appears in Collections:
공과대학 > 화학공학부 > Articles
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