Characterization of a Ru-based ternary-oxide thin film for a diffusion barrier

Title
Characterization of a Ru-based ternary-oxide thin film for a diffusion barrier
Author(s)
김수현홍태은[홍태은]E. D. Jeong,[E. D. Jeong,]변미랑[변미랑]Ho-Soon Yang[Ho-Soon Yang]Y. B. Kang[Y. B. Kang]
Keywords
ION MASS-SPECTROMETRY; RAY PHOTOELECTRON-SPECTROSCOPY; ATOMIC LAYER DEPOSITION; CU; ELECTRODEPOSITION; METALLIZATION; RUTHENIUM
Issue Date
201209
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.61, no.6, pp.984 - 987
Abstract
Ruthenium-based ternary-oxide thin films were grown by using thermal atomic layer deposition. The films were grown by repeating super-cycles consisting of Ru and Al2O3 sub-cycles. X-ray diffraction showed that Ru ternary-oxide thin film had a nano crystalline structure. The chemical state in the oxide thin film was clearly investigated by using X-ray photoelectron spectroscopy, and the composition of the Ru based ternary oxide film was characterized by using secondary ion mass spectrometry (SIMS). The quantitative analysis of the thin oxide films by using SIMS was calibrated by using Rutherford backscattering spectrometry. Based on the results, effects of aluminum and oxygen incorporation into Ru are discussed.
URI
http://hdl.handle.net/YU.REPOSITORY/27346http://dx.doi.org/10.3938/jkps.61.984
ISSN
0374-4884
Appears in Collections:
공과대학 > 신소재공학부 > Articles
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