Carrier Transport Mechanism at the Interface between Metals and p-Type III-Nitrides Having Different Surface Electronic Structures

Title
Carrier Transport Mechanism at the Interface between Metals and p-Type III-Nitrides Having Different Surface Electronic Structures
Author(s)
장자순장선호
Keywords
RESISTANCE OHMIC CONTACTS; INGAN/GAN SUPERLATTICE; GAN
Issue Date
201209
Publisher
IOP PUBLISHING LTD
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v.51, no.9
Abstract
We have investigated the carrier transport mechanism for nonalloyed Ni/Au ohmic contacts to p-In0.15Ga0.85N/GaN superlattices (SLs) and Mg delta (delta)-doped GaN using current-voltage-temperature (I-V-T) and specific contact resistance-temperature (R-sc-T) data. The p-SL and Mg delta-doped GaN contacts show a linear I-V behavior, indicating that the Mg delta doping in the GaN matrix as well as p-SL is very effective in improving the electrical properties of p-ohmic contacts. From the R-sc-T and I-V-T measurements, the p-SL and Mg delta-doped GaN contacts show slight temperature-dependence characteristics at the temperatures of >= 293 K. These different behaviors can be described in terms of a reduced energy band-bending, an increased hole carrier density, and a reduced Schottky barrier height. (C) 2012 The Japan Society of Applied Physics
URI
http://hdl.handle.net/YU.REPOSITORY/27341http://dx.doi.org/10.1143/JJAP.51.09MK02
ISSN
0021-4922
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공과대학 > 전자공학과 > Articles
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