Schottky Barrier Height and S-Parameter of Ti, Cu, Pd, and Pt Contacts on p-Type GaN

Title
Schottky Barrier Height and S-Parameter of Ti, Cu, Pd, and Pt Contacts on p-Type GaN
Author(s)
박영준[박영준]안광순김현수[김현수]
Keywords
THERMIONIC-FIELD-EMISSION; I-V-T; TECHNOLOGY
Issue Date
201209
Publisher
IOP PUBLISHING LTD
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v.51, no.9
Abstract
The Schottky barrier height (SBH) of Ti, Cu, Pd, and Pt contacts on p-GaN and their work-function dependence, the S-parameter, were investigated. According to thermionic emission model, the SBH was obtained to be 0.85, 0.70, 0.61, and 0.59 eV for Ti, Cu, Pd, and Pt, respectively, yielding an S-parameter of 0.19. However, the ideality factor was as large as similar to 4 and anomalous temperature dependences of the SBH and ideality factors were observed, indicating that the pure thermionic emission is not appropriate to explain carrier transport. Based on the barrier inhomogeneity and thermionic field emission models, S-parameters of 0.27 and 0.38 could be reasonably obtained. (C) 2012 The Japan Society of Applied Physics
URI
http://hdl.handle.net/YU.REPOSITORY/27281http://dx.doi.org/10.1143/JJAP.51.09MK01
ISSN
0021-4922
Appears in Collections:
공과대학 > 화학공학부 > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE