Temperature-dependent photoluminescence of ZnO thin films deposited by using the sol-gel dip-coating method

Title
Temperature-dependent photoluminescence of ZnO thin films deposited by using the sol-gel dip-coating method
Author(s)
정재학이상헌소원섭남기웅[남기웅]윤현식[윤현식]박형길[박형길]김경민[김경민]김소아람[김소아람]김민수[김민수]이재원[이재원]
Keywords
PULSED-LASER DEPOSITION; MULTIPLE-QUANTUM WELLS; OPTICAL-PROPERTIES; STRUCTURAL-PROPERTIES; ZINC-OXIDE; NITROGEN-ACCEPTOR; EMISSION; LINEWIDTH; EXCITONS; MOCVD
Issue Date
201210
Publisher
KOREAN PHYSICAL SOC
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.61, no.8, pp.1171 - 1176
Abstract
The sol-gel dip-coating method is a simple and inexpensive technique compared to molecular beam epitaxy and chemical vapor deposition. In spite of extensive research over the past several years, the temperature-dependent photoluminescence in ZnO is still not fully understood. The temperaturedependent PL of ZnO thin films grown on quartz substrate by using the dip-coating method are investigated. According to Haynes' empirical rule, the peak at 3.320 eV could be attributed to two electron satellites (TES). Theoretically, the radiative lifetime of the free excitons increases with temperature. The full width at half maximum (FWHM) is theoretically fitted by the experimental data. In the case of exciton-LO phonon coupling, the FWHM value of the donor-acceptor pair (DAP) is larger than that of the free-to-neutral-acceptor (e,A(0)). In the case of the exciton-acoustic-phonon coupling strength, however, the value of the DAP is smaller than that of the (e,A(0)).
URI
http://hdl.handle.net/YU.REPOSITORY/27166http://dx.doi.org/10.3938/jkps.61.1171
ISSN
0374-4884
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공과대학 > 화학공학부 > Articles
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