Control of Ga Distribution in Cu(In,Ga)Se-2 Photovoltaic Absorber by Solid-State Selenizatoin of CuGa/In/Se/In/CuGa Stack

Title
Control of Ga Distribution in Cu(In,Ga)Se-2 Photovoltaic Absorber by Solid-State Selenizatoin of CuGa/In/Se/In/CuGa Stack
Author(s)
전찬욱박준성서진우박상욱정우진박래만[박래만]김제하[김제하]
Keywords
FILM SOLAR-CELLS; PV-MODULES; PRECURSOR
Issue Date
201210
Publisher
IOP PUBLISHING LTD
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v.51, no.10
Abstract
Among many key parameters required to obtain a record-efficiency Cu(In,Ga)Se-2 (CIGS) cell, the band-gap of CIGS should have a double-graded profile in which the band-gap increases toward both of the back and front of the absorber. In an effort to obtain an increased Ga content near the junction area which will raise the band-gap energy of CIGS, a novel metal precursor layered with predetermined amount of Se was annealed in N-2 ambient. By inserting the Se layer in between metallic precursor layers, it was found that the front band-gap was increased due to the high Ga content by changing the direction of selenization reaction from inside to outside of metallic precursor. The proposed method is expected to provide a simple process for high quality CIGS photovoltaic absorber layer. The conversion efficiency of 6.80% with J(sc) = 37.65 mA/cm(2), V-oc = 0.51 V, and FF = 35.4% in an active area of 0.48 cm(2) was achieved. (C) 2012 The Japan Society of Applied Physics
URI
http://hdl.handle.net/YU.REPOSITORY/27147http://dx.doi.org/10.1143/JJAP.51.10NC21
ISSN
0021-4922
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공과대학 > 화학공학부 > Articles
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